AD8009 d

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a
s
Low Distortion Amplifier
1 GHz, 5,500 V/
AD8009
s Slew Rate, 4 V Step, G = +2
545 ps Rise Time, 2 V Step, G = +2
Large Signal Bandwidth
440 MHz, G = +2
320 MHz, G = +10
Small Signal Bandwidth (–3 dB)
1 GHz, G = +1
700 MHz, G = +2
Settling Time 10 ns to 0.1%, 2 V Step, G = +2
Low Distortion Over Wide Bandwidth
SFDR
–44 dBc @ 150 MHz, G = +2, V
O
= 2 V p-p
–41 dBc @ 150 MHz, G = +10, V
O
= 2 V p-p
3rd Order Intercept (3IP)
26 dBm @ 70 MHz, G = +10
18 dBm @ 150 MHz, G = +10
Good Video Specifications
Gain Flatness 0.1 dB to 75 MHz
0.01% Differential Gain Error, R
L
= 150
FUNCTIONAL BLOCK DIAGRAMS
8-Lead Plastic SOIC (SO-8) 5-Lead SOT-23 (RT-5)
NC
–IN
+IN
–V
S
1
2
3
4
AD8009
8
7
6
5
NC
AD8009
+V
S
V
OUT
1
5
+V
S
OUT
–V
S
2
NC
+IN
3
4
–IN
NC = NO CONNECT
0.01
Differential Phase Error, R
L
= 150
PRODUCT DESCRIPTION
The AD8009 is an ultrahigh speed current feedback amplifier
with a phenomenal 5,500 V/µs slew rate that results in a rise
time of 545 ps, making it ideal as a pulse amplifier.
The high slew rate reduces the effect of slew rate limiting and
results in the large signal bandwidth of 440 MHz required for
high resolution video graphic systems. Signal quality is main-
tained over a wide bandwidth with worst case distortion of
–40 dBc @ 250 MHz (G = +10, 1 V p-p). For applications
with multitone signals such as IF signal chains, the third order
Intercept (3IP) of 12 dBm is achieved at the same frequency.
This distortion performance coupled with the current feedback
architecture make the AD8009 a flexible component for a gain
stage amplifier in IF/RF signal chains.
The AD8009 is capable of delivering over 175 mA of load
current and will drive four back terminated video loads while
maintaining low differential gain and phase error of 0.02% and
0.04° respectively. The high drive capability is also reflected in
the ability to deliver 10 dBm of output power @ 70 MHz with
–38 dBc SFDR.
The AD8009 is available in a small SOIC package and will
operate over the industrial temperature range –40°C to +85°C.
The AD8009 is also available in an SOT-23-5 and will operate
over the commercial temperature range 0°C to 70°C.
High Output Drive
175 mA Output Load Drive
10 dBm with –38 dBc SFDR @ 70 MHz, G = +10
Supply Operation
+5 V to
5 V Voltage Supply
14 mA (Typ) Supply Current
APPLICATIONS
Pulse Amplifier
IF/RF Gain Stage/Amplifiers
High Resolution Video Graphics
High Speed Instrumentations
CCD Imaging Amplifier
2
G = +2
R
F
= 301
R
L
= 150
1
–30
G = 2
R
F
= 301
V
O
= 2V p-p
0
–40
–1
V
O
= 2Vp–p
–2
G = +10
R
F
= 200
–50
2ND,
100
LOAD
R
L
= 100
–3
–60
2ND,
150
LOAD
–4
–70
–5
–6
–80
3RD,
100
LOAD
–7
3RD,
150
LOAD
–90
–8
1
10
100
1000
FREQUENCY RESPONSE – MHz
–100
1
10
100
200
Figure 1. Large Signal Frequency Response; G = +2 and +10
FREQUENCY RESPONSE – MHz
REV. D
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.
Figure 2. Distortion vs. Frequency; G = +2
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781/329-4700 World Wide Web Site: http://www.analog.com
Fax: 781/326-8703
© Analog Devices, Inc., 2000
FEATURES
Ultrahigh Speed
5,500 V/
 AD8009–SPECIFICATIONS
(@ T
A
= 25
C, V
S
=
5 V, R
L
= 100
, for R Package: R
F
= 301
for G = +1, +2, R
F
= 200
for G = +10, for RT Package: R
F
= 332
for G = +1, R
F
= 226
for G = +2 and R
F
= 191 for G = +10, unless otherwise noted.)
AD8009AR/JRT
Model
Conditions
Min
Typ
Max
Unit
DYNAMIC PERFORMANCE
–3 dB Small Signal Bandwidth, V
O
= 0.2 V p-p
R Package
G = +1, R
F
= 301 Ω
1000
MHz
RT Package
G = +1, R
F
= 332 Ω
845
MHz
G = +2
480
700
MHz
G = +10
300
350
MHz
Large Signal Bandwidth, V
O
= 2 V p-p
G = +2
390
440
MHz
G = +10
235
320
MHz
Gain Flatness 0.1 dB, V
O
= 0.2 V p-p
G = +2, R
L
= 150 Ω
45
75
MHz
Slew Rate
G = +2, R
L
= 150 Ω, 4 V Step 4500
5500
V/µs
Settling Time to 0.1%
G = +2, R
L
= 150 Ω, 2 V Step
10
ns
G = +10, 2 V Step
25
ns
Rise and Fall Time
G = +2, R
L
= 150 Ω, 4 V Step
0.725
ns
HARMONIC/NOISE PERFORMANCE
SFDR G = +2, V
O
= 2 V p-p
5 MHz
–74
dBc
70 MHz
–53
dBc
150 MHz
–44
dBc
SFDR
G = +10, V
O
= 2 V p-p
5 MHz
–58
dBc
70 MHz
–41
dBc
150 MHz
–41
dBc
Third Order Intercept (3IP)
70 MHz
26
dBm
W.R.T. Output, G = +10
150 MHz
18
dBm
250 MHz
12
dBm
Input Voltage Noise
f = 10 MHz
1.9
nV/√
Hz
Input Current Noise
f = 10 MHz, +In
46
pA/√
Hz
f = 10 MHz,
–In
41
pA/√
Hz
Differential Gain Error
NTSC, G = +2, R
L
= 150 Ω
0.01
0.03
%
NTSC, G = +2,
R
L
= 37.5 Ω
0.02
0.05
%
Differential Phase Error
NTSC, G = +2, R
L
= 150 Ω
0.01
0.03
Degrees
NTSC, G = +2,
R
L
= 37.5 Ω
0.04
0.08
Degrees
DC PERFORMANCE
Input Offset Voltage
2
5
mV
T
MIN
–T
MAX
7
mV
Offset Voltage Drift
4
µ
V/
°
C
–Input Bias Current
50
150
±µ
A
T
MIN
–T
MAX
75
±µ
A
+Input Bias Voltage
50
150
±µ
A
T
MIN
–T
MAX
75
±µ
A
Open Loop Transresistance
90
250
k
Ω
T
MIN
–T
MAX
170
k
Ω
INPUT CHARACTERISTICS
Input Resistance
+Input
110
kΩ
–Input
8
Ω
Input Capacitance
+Input
2.6
pF
Input Common-Mode Voltage Range
3.8
±V
Common-Mode Rejection Ratio
V
CM
= ± 2.5
50
52
dB
OUTPUT CHARACTERISTICS
Output Voltage Swing
±3.7
±3.8
V
Output Current
R
L
= 10 Ω, P
D
Package = 0.7 W 150
175
mA
Short Circuit Current
330
mA
POWER SUPPLY
Operating Range
+5
± 6
V
Quiescent Current
14
16
mA
T
MIN
–T
MAX
18
mA
Power Supply Rejection Ratio
V
S
= ± 4 V to ± 6 V
64
70
dB
Specifications subject to change without notice.
–2–
REV. D
AD8009
ABSOLUTE MAXIMUM RATINGS
1
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.6 V
Internal Power Dissipation
2
Small Outline Package (R) . . . . . . . . . . . . . . . . . . . . 0.75 Watts
Input Voltage (Common Mode) . . . . . . . . . . . . . . . . . . . .
±
V
S
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated by the
AD8009 is limited by the associated rise in junction tempera-
ture. The maximum safe junction temperature for plastic
encapsulated devices is determined by the glass transition
temperature of the plastic, approximately 150°C. Exceeding
this limit temporarily may cause a shift in parametric perfor-
mance due to a change in the stresses exerted on the die by the
package. Exceeding a junction temperature of 175°C for an
extended period can result in device failure.
While the AD8009 is internally short circuit protected, this
may not be sufficient to guarantee that the maximum junction
temperature (150°C) is not exceeded under all conditions. To
ensure proper operation, it is necessary to observe the maxi-
mum power derating curves.
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . .
±
3.5 V
Output Short Circuit Duration
. . . . . . . . . . . . . . . . . . . . . . Observe Power Derating Curves
Storage Temperature Range R Package . . . . –65
°
C to +125
°
C
Operating Temperature Range (A Grade) . . . –40
°
C to +85
°
C
Operating Temperature Range (J Grade) . . . . . . . 0
°
C to 70
°
C
Lead Temperature Range (Soldering 10 sec) . . . . . . . . . 300
°
C
NOTES
1
Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
2
Specification is for device in free air:
8-Lead SOIC Package: θ
JA
= 155°C/W.
5-Lead SOT-23 Package: θ
JA
= 240°C/W.
2.0
T
J
= +150°C
1.5
8-LEAD SOIC PACKAGE
1.0
0.5
5-LEAD SOT-23 PACKAGE
–50
–40 –30 –20 –10
0
10
20
30
40
50
60
70
80
90
AMBIENT TEMPERATURE – °C
Figure 3. Plot of Maximum Power Dissipation vs.
Temperature
ORDERING GUIDE
Temperature
Package
Package
Branding
Model
Range
Description
Option
Information
AD8009ACHIPS
–40°C to +85°C
Die
AD8009AR
–40
°
C to +85
°
C
8-Lead SOIC
SO-8
AD8009AR-REEL
–40°C to +85°C
8-Lead SOIC
13" Tape and Reel
AD8009AR-REEL7
–40°C to +85°C
8-Lead SOIC
7" Tape and Reel
AD8009JRT-REEL
0
°
C to 70
°
C
5-Lead SOT-23
13" Tape and Reel
HKJ
AD8009JRT-REEL7
0°C to 70°C
5-Lead SOT-23
7" Tape and Reel
HKJ
AD8009-EB
Evaluation Board
SO-8
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AD8009 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high-energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
REV. D
–3–
0
AD8009
–Typical Performance Characteristics
3
6.2
2
G = +1, RT
G = +1, R
6.1
6.0
1
0
5.9
G = +2
R
F
= 301
R
L
= 150
–1
V
O
= 200mV p–p
G = +1, +2
:
R
F
= 301
G = +10
:
R
F
= 200
RT PACKAGE
:
G = +1: R
F
= 332
5.8
G = +2, R & RT
V
O
= 200mV p–p
–2
–3
5.7
5.6
G = +10, R & RT
–4
5.5
G = +10: R
F
= 191
–5
5.4
5.3
5.2
–6
–7
1
10
100
1000
1
10
100
1000
FREQUENCY – MHz
FREQUENCY – MHz
Figure 4. Frequency Response; G = +1, +2, +10, R and RT
Packages
Figure 7. Gain Flatness; G = +2
8
22
7
6
21
20
5
4
G = +2
R
F
= 301
R
L
= 150
19
18
R
L
= 100
V
O
AS SHOWN
2V p–p
4V p–p
V
O
AS SHOWN
3
17
16
2V p–p
4V p–p
2
1
15
0
–1
14
13
–2
12
1
10
FREQUENCY – MHz
100
1000
1
10
FREQUENCY – MHz
100
1000
Figure 5. Large Signal Frequency Response; G = +2
Figure 8. Large Signal Frequency Response; G = +10
8
22
7
6
21
+85
C
20
–40
C
5
4
19
–40
C
G = +10
R
F
= 200
–40
C
G = +2
R
F
= 301
R
L
= 150
18
V
O
= 2V p–p
+85
C
3
2
V
O
= 2V p–p
17
+85
C
16
15
1
0
14
–1
13
12
–2
1
10
FREQUENCY – MHz
100
1000
1
10
FREQUENCY – MHz
100
1000
Figure 6. Large Signal Frequency Response vs.
Temperature; G = +2
Figure 9. Large Signal Frequency Response vs.
Temperature; G = +10
–4–
REV. D
R PACKAGE
:
R
L
= 100
G = +2: R
F
= 226
G = +10
R
F
= 200
R
L
= 100
AD8009
–30
–30
–40
V
O
= 2V p-p
–35
R
L
= 100
V
O
= 2V p–p
2ND
–40
2ND,
100
LOAD
–50
–45
–50
–60
2ND,
150
LOAD
–55
–60
–70
3RD
3RD,
100
LOAD
–80
–65
3RD,
150
LOAD
–70
–90
–75
–100
–80
1
10
100
200
5
10
100
200
FREQUENCY RESPONSE – MHz
FREQUENCY – MHz
Figure 10. Distortion vs. Frequency; G = +2
Figure 13. Distortion vs. Frequency; G = +10
–35
–35
–40
250MHz
–40
–45
–45
70MHz
–50
250MHz
–50
70MHz
–55
–55
5MHz
–60
–60
–65
–65
–70
5MHz
200
–75
–70
22.1
200
50
50
–80
P
OUT
22.1
–75
50
50
P
OUT
50
–85
–90
–80
50
–85
–10
–8
–6 –4 –2
0
2
4
6
8 10
12
14
–9
–10 –8
–6 –4 –20 24 680
12
14
P
OUT
– dBm
P
OUT
– dBm
Figure 11. 2nd Harmonic Distortion vs. P
OUT
; (G = +10)
Figure 14. 3rd Harmonic Distortion vs. P
OUT
; (G = +10)
0.02
50
0.01
G = +2
R
F
= 301
45
200
R
L
= 150
22.1
0.00
40
50
50
P
OUT
–0.01
50
35
R
L
= 37.5
–0.02
0
100
IRE
30
0.10
G = +2
R
F
= 301
R
L
= 37.5
25
0.05
20
–0.00
–0.05
R
L
= 150
15
–0.10
10
10
100
250
0
100
IRE
FREQUENCY – MHz
Figure 12. Differential Gain and Phase
Figure 15. Two Tone, 3rd Order IMD Intercept vs.
Frequency; G = +10
REV. D
–5–
G = +10
R
F
= 200
G = 2
R
F
= 301
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