AD8091 2 0

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a
Low Cost, High-Speed
Rail-to-Rail Amplifiers
AD8091/AD8092
FEATURES
Low Cost Single (AD8091), Dual (AD8092)
Voltage Feedback Architecture
Fully Specified at +3 V, +5 V, and
5 V Supplies
Single-Supply Operation
Output Swings to Within 25 mV of Either Rail
Input Voltage Range: –0.2 V to +4 V; V
S
= +5 V
High-Speed and Fast Settling on +5 V:
110 MHz –3 dB Bandwidth (G = +1)
145 V/
s Slew Rate
50 ns Settling Time to 0.1%
Good Video Specifications (G = +2)
Gain Flatness of 0.1 dB to 20 MHz; R
L
= 150
0.03% Differential Gain Error; R
L
= 1 k
0.03
Differential Phase Error; R
L
= 1 k
Low Distortion
–80 dBc Total Harmonic @ 1 MHz, R
L
= 100
Outstanding Load Drive Capability
Drives 45 mA, 0.5 V from Supply Rails
Drives 50 pF Capacitive Load (G = +1)
Low Power of 4.4 mA/Amplifier
APPLICATIONS
Coax Cable Driver
Active Filters
Video Switchers
Professional Cameras
CCD Imaging Systems
CD/DVD
CONNECTION DIAGRAMS
SO-8
(R-8)
SOT23-5
(RT-5)
NC
–IN
+IN
1
2
3
4
AD8091
8
7
6
5
NC
+V
S
V
OUT
NC
V
OUT
–V
S
+IN
1
2
3
AD8091
5
+V
S
4
–IN
–V
S
NC = NO CONNECT
SO-8 and SO-8
(RM-8, R-8)
OUT1
–IN1
+IN1
1
2
3
4
AD8092
8
7
6
5
+V
S
–
OUT
+
–IN2
–
–V
S
+
+IN2
PRODUCT DESCRIPTION
The AD8091 (single) and AD8092 (dual) are low cost, voltage
feedback, high-speed amplifiers designed to operate on +3 V,
+5 V, or ± 5 V supplies. They have true single-supply capability
with an input voltage range extending 200 mV below the nega-
tive rail and within 1 V of the positive rail.
Despite their low cost, the AD8091/AD8092 provide excellent
overall performance and versatility. The output voltage swing
extends to within 25 mV of each rail, providing the maximum
output dynamic range with excellent overdrive recovery. This
makes the AD8091/AD8092 useful for video electronics such as
cameras, video switchers, or any high-speed portable equipment.
Low distortion and fast settling make them ideal for active filter
applications.
The AD8091/AD8092 offer low power supply current and can
operate on a single +3 V power supply. These features are ide-
ally suited for portable and battery-powered applications where
size and power are critical.
The wide bandwidth and fast slew rate on a single +5 V supply
make these amplifiers useful in many general purpose, high-speed
applications where dual power supplies of up to ±6 V and single
supplies from +3 V to +12 V are needed.
All of this low cost performance is offered in an 8-lead SOIC
(AD8091/AD8092), along with a tiny SOT23-5 package
(AD8091) and a µSOIC package (AD8092).
REV. 0
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties that
may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Analog Devices.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781/329-4700
www.analog.com
Fax: 781/326-8703
© Analog Devices, Inc., 2002
 AD8091/AD8092–SPECIFICATIONS
(@ T
A
= +25
C, V
S
= +5 V, R
L
= 2 k
to +2.5 V,
unless otherwise noted.)
AD8091A/AD8092A
Parameter
Conditions
Min
Typ
Max
Unit
DYNAMIC PERFORMANCE
–3 dB Small Signal Bandwidth
G = +1, V
O
= 0.2 V p-p
70
110
MHz
G = –1, +2, V
O
= 0.2 V p-p
50
MHz
Bandwidth for 0.1 dB Flatness
G = +2, V
O
= 0.2 V p-p,
R
L
= 150
Ω
to +2.5 V,
R
F
= 806 Ω
20
MHz
Slew Rate
G = –1, V
O
= 2 V Step
100
145
V/
µ
s
Full Power Response
G = +1, V
O
= 2 V p-p
35
MHz
Settling Time to 0.1%
G = –1, V
O
= 2 V Step
50
ns
NOISE/DISTORTION PERFORMANCE
Total Harmonic Distortion
*
f
C
= 5 MHz, V
O
= 2 V p-p, G = +2
–67
dB
Input Voltage Noise
f = 10 kHz
16
nV/√
Hz
Input Current Noise
f = 10 kHz
850
fA/√
Hz
Differential Gain Error (NTSC)
G = +2, R
L
= 150 Ω to +2.5 V
0.09
%
R
L
= 1 kΩ to +2.5 V
0.03
%
Differential Phase Error (NTSC)
G = +2, R
L
= 150 Ω to +2.5 V
0.19
Degrees
R
L
= 1 kΩ to +2.5 V
0.03
Degrees
Crosstalk
f = 5 MHz, G = +2
–60
dB
DC PERFORMANCE
Input Offset Voltage
1.7
10
mV
T
MIN
to T
MAX
25
mV
Offset Drift
10
µ
V/
°
C
Input Bias Current
1.4
2.5
µ
A
T
MIN
to T
MAX
3.25
µ
A
Input Offset Current
0.1
0.75
µ
A
Open-Loop Gain
R
L
= 2 k
Ω
to +2.5 V
86
98
dB
T
MIN
to T
MAX
96
dB
R
L
= 150
Ω
to +2.5 V
76
82
dB
T
MIN
to T
MAX
78
dB
INPUT CHARACTERISTICS
Input Resistance
290
k
Ω
Input Capacitance
1.4
pF
Input Common-Mode Voltage Range
–0.2 to 4
V
Common-Mode Rejection Ratio
V
CM
= 0 V to +3.5 V
72
88
dB
OUTPUT CHARACTERISTICS
Output Voltage Swing
R
L
= 10 k
Ω
to +2.5 V
0.015 to 4.985
V
R
L
= 2 k
Ω
to +2.5 V
0.1 to 4.9
0.025 to 4.975
V
R
L
= 150
Ω
to +2.5 V
0.3 to 4.625
0.2 to 4.8
V
Output Current
V
OUT
= 0.5 V to +4.5 V
45
mA
T
MIN
to T
MAX
45
mA
Short Circuit Current
Sourcing
80
mA
Sinking
130
mA
Capacitive Load Drive
G = +1
50
pF
POWER SUPPLY
Operating Range
3
12
V
Quiescent Current/Amplifier
4.4
5
mA
Power Supply Rejection Ratio
∆
V
S
=
±
1 V
70
80
dB
OPERATING TEMPERATURE RANGE
–40
+85
°
C
NOTES
*
Refer to Figure 15.
Specifications subject to change without notice.
–2–
REV. 0
SPECIFICATIONS
AD8091/AD8092
(@ T
A
= +25
C, V
S
= +3 V, R
L
= 2 k
to +1.5 V, unless otherwise noted.)
AD8091A/AD8092A
Parameter
Conditions
Min
Typ
Max
Unit
DYNAMIC PERFORMANCE
–3 dB Small Signal Bandwidth
G = +1, V
O
= 0.2 V p-p
70
110
MHz
G = –1, +2, V
O
= 0.2 V p-p
50
MHz
Bandwidth for 0.1 dB Flatness
G = +2, V
O
= 0.2 V p-p,
R
L
= 150 Ω to 2.5 V,
R
F
= 402 Ω
17
MHz
Slew Rate
G = –1, V
O
= 2 V Step
90
135
V/
µ
s
Full Power Response
G = +1, V
O
= 1 V p-p
65
MHz
Settling Time to 0.1%
G = –1, V
O
= 2 V Step
55
ns
NOISE/DISTORTION PERFORMANCE
Total Harmonic Distortion
*
f
C
= 5 MHz, V
O
= 2 V p-p,
G = –1, R
L
= 100 Ω to +1.5 V
–47
dB
Input Voltage Noise
f = 10 kHz
16
nV/
√
Hz
Input Current Noise
f = 10 kHz
600
fA/
√
Hz
Differential Gain Error (NTSC)
G = +2, V
CM
= +1 V
R
L
= 150
Ω
to +1.5 V,
0.11
%
R
L
= 1 k
Ω
to +1.5 V
0.09
%
Differential Phase Error (NTSC)
G = +2, V
CM
= +1 V
R
L
= 150
Ω
to +1.5 V
0.24
Degrees
R
L
= 1 k
Ω
to +1.5 V
0.10
Degrees
Crosstalk
f = 5 MHz, G = +2
–60
dB
DC PERFORMANCE
Input Offset Voltage
1.6
10
mV
T
MIN
to T
MAX
25
mV
Offset Drift
10
µ
V/
°
C
Input Bias Current
1.3
2.6
µ
A
T
MIN
to T
MAX
3.25
µ
A
Input Offset Current
0.15
0.8
µ
A
Open-Loop Gain
R
L
= 2 k
Ω
80
96
dB
T
MIN
to T
MAX
94
dB
R
L
= 150
Ω
74
82
dB
T
MIN
to T
MAX
76
dB
INPUT CHARACTERISTICS
Input Resistance
290
k
Ω
Input Capacitance
1.4
pF
Input Common-Mode Voltage Range
–0.2 to +2.0
V
Common-Mode Rejection Ratio
V
CM
= 0 V to 1.5 V
72
88
dB
OUTPUT CHARACTERISTICS
Output Voltage Swing
R
L
= 10 k
Ω
to +1.5 V
0.01 to 2.99
V
R
L
= 2 k
Ω
to +1.5 V
0.075 to 2.9
0.02 to 2.98
V
R
L
= 150
Ω
to +1.5 V
0.2 to 2.75
0.125 to 2.875
V
Output Current
V
OUT
= 0.5 V to +2.5 V
45
mA
T
MIN
to T
MAX
45
mA
Short Circuit Current
Sourcing
60
mA
Sinking
90
mA
Capacitive Load Drive
G = +1
45
pF
POWER SUPPLY
Operating Range
3
12
V
Quiescent Current/Amplifier
4.2
4.8
mA
Power Supply Rejection Ratio
∆
V
S
= +0.5 V
68
80
dB
OPERATING TEMPERATURE RANGE
–40
+85
°
C
NOTES
*
Refer to Figure 15.
Specifications subject to change without notice.
REV. 0
–3–
AD8091/AD8092–SPECIFICATIONS
(@ T
A
= +25
C, V
S
=
5 V, R
L
= 2 k
to Ground,
unless otherwise noted.)
AD8091A/AD8092A
Parameter
Conditions
Min
Typ
Max
Unit
DYNAMIC PERFORMANCE
–3 dB Small Signal Bandwidth
G = +1, V
O
= 0.2 V p-p
70
110
MHz
G = –1, +2, V
O
= 0.2 V p-p
50
MHz
Bandwidth for 0.1 dB Flatness
G = +2, V
O
= 0.2 V p-p,
R
L
= 150 Ω,
R
F
= 1.1 kΩ
20
MHz
Slew Rate
G = –1, V
O
= 2 V Step
105
170
V/µs
Full Power Response
G = +1, V
O
= 2 V p-p
40
MHz
Settling Time to 0.1%
G = –1, V
O
= 2 V Step
50
ns
NOISE/DISTORTION PERFORMANCE
Total Harmonic Distortion
f
C
= 5 MHz, V
O
= 2 V p-p, G = +2
–71
dB
Input Voltage Noise
f = 10 kHz
16
nV/√
Hz
Input Current Noise
f = 10 kHz
900
fA/√
Hz
Differential Gain Error (NTSC)
G = +2, R
L
= 150 Ω
0.02
%
R
L
= 1 kΩ
0.02
%
Differential Phase Error (NTSC)
G = +2, R
L
= 150 Ω
0.11
Degrees
R
L
= 1 kΩ
0.02
Degrees
Crosstalk
f = 5 MHz, G = +2
–60
dB
DC PERFORMANCE
Input Offset Voltage
1.8
11
mV
T
MIN
to T
MAX
27
mV
Offset Drift
10
µ
V/
°
C
Input Bias Current
1.4
2.6
µ
A
T
MIN
to T
MAX
3.5
µ
A
Input Offset Current
0.1
0.75
µ
A
Open-Loop Gain
R
L
= 2 k
Ω
88
96
dB
T
MIN
to T
MAX
96
dB
R
L
= 150
Ω
78
82
dB
T
MIN
to T
MAX
80
dB
INPUT CHARACTERISTICS
Input Resistance
290
k
Ω
Input Capacitance
1.4
pF
Input Common-Mode Voltage Range
–5.2 to +4.0
V
Common-Mode Rejection Ratio
V
CM
= –5 V to +3.5 V
72
88
dB
OUTPUT CHARACTERISTICS
Output Voltage Swing
R
L
= 10 k
Ω
–4.98 to +4.98
V
R
L
= 2 k
Ω
–4.85 to +4.85 –4.97 to +4.97
V
R
L
= 150
Ω
–4.45 to +4.3 –4.6 to +4.6
V
Output Current
V
OUT
= –4.5 V to +4.5 V
45
mA
T
MIN
to T
MAX
45
mA
Short Circuit Current
Sourcing
100
mA
Sinking
160
mA
Capacitive Load Drive
G = +1 (AD8091/AD8092)
50
pF
POWER SUPPLY
Operating Range
3
12
V
Quiescent Current/Amplifier
4.8
5.5
mA
Power Supply Rejection Ratio
∆
V
S
=
±
1 V
68
80
dB
OPERATING TEMPERATURE RANGE
–40
+85
°C
Specifications subject to change without notice.
–4–
REV. 0
AD8091/AD8092
ABSOLUTE MAXIMUM RATINGS
*
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.6 V
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . See Figure 1
Common-Mode Input Voltage . . . . . . . . . . . . . . . . . . . . ± V
S
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . ± 2.5 V
Output Short Circuit Duration . . . . . . . . . . . . . See Figure 1
Storage Temperature Range . . . . . . . . . . . –65°C to +125°C
Operating Temperature Range . . . . . . . . . . . –40°C to +85°C
Lead Temperature Range (Soldering 10 sec) . . . . . . . . 300°C
RMS output voltages should be considered. (If R
L
is referenced to V
S–
,
as in single supply operation, then the total drive power is V
S
I
OUT
).
If the rms signal levels are indeterminate, then consider the worst
case, when V
OUT
= V
S
/4 for R
L
to mid supply:
V
2
S
PVI
=×
(
)
+
4
D
S
S
R
L
*
Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
(In single-supply operation with R
L
referenced to V
S–
, worst case is
V
OUT
= V
S
/2.)
Airflow will increase heat dissipation, effectively reducing
JA
. Also,
more metal directly in contact with the package leads from metal traces,
through holes, ground, and power planes will reduce the
JA
. Care
must be taken to minimize parasitic capacitances at the input leads
of high-speed op amps as discussed in the board layout section.
Figure 1 shows the maximum safe power dissipation in the package
versus ambient temperatue for the SO-8 (125°C/W), SOT-23-5
(180°C/W), and µSO-8 (150°C/W) package on a JEDEC standard
4-layer board.
MAXIMUM POWER DISSIPATION
The maximum safe power dissipation in the AD8091/AD8092
package is limited by the associated rise in junction temperature
(T
J
) on the die. The plastic encapsulating the die will locally reach
the junction temperature. At approximately 150°C, which is the
glass transition temperature, the plastic will change its properties.
Even temporarily exceeding this temperature limit may change the
stresses that the package exerts on the die, permanently shifting the
parametric performance of the AD8091/AD8092. Exceeding a
junction temperature of 175°C for an extended period of time can
result in changes in the silicon devices, potentially causing failure.
The still-air thermal properties of the package (
JA
), ambient tem-
perature (T
A
), and the total power dissipated in the package (P
D
)
can be used to determine the junction temperature of the die. The
junction temperature can be calculated as follows:
TT P
2.0
T
J
= 150
C
SO-8
1.5
1.0
J
=+×
A
(
D
θ
J
A
)
SO-8
0.5
The power dissipated in the package (P
D
) is the sum of the quiescent
power dissipation and the power dissipated in the package due to the
load drive for all outputs. The quiescent power is the voltage between
the supply pins (V
S
) times the quiescent current (I
S
). Assuming the
load (R
L
) is referenced to mid-supply, then the total drive power is V
S
/
2
I
OUT
, some of which is dissipated in the package and some in the
load (V
OUT
I
OUT
). The difference between the total drive power and
the load power is the drive power dissipated in the package.
P
D
= quiescent power + (total drive power – load power)
SOT23-5
0
–50 –40
–30
–20
–10
0
10
20
30
40
50
60
70 80
90
AMBIENT TEMPERATURE –
C
Figure 1. Maximum Power Dissipation vs. Temperature
for a 4-Layer Board
VV
R
V
2
PVI
=×
)
+×
S
OUT
–
OUT
D
S
S
2
R
L
L
REV. 0
–5–
(
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