AD8512 0

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a
Precision, Very Low Noise,
Low Input Bias Current, Wide Bandwidth
JFET Operational Amplifiers
AD8512
FEATURES
Fast Settling Time: 500 ns to 0.1%
Low Offset Voltage: 400
PIN CONFIGURATIONS
V Max
8-Lead MSOP
(RM Suffix)
C Typ
Low Input Bias Current: 25 pA Typ
Dual-Supply Operation:
V/
5 V to
15 V
OUT A
1
8
AD8512
V+
Hz
Low Distortion: 0.0005%
No Phase Reversal
Unity Gain Stable
√
–1N A
+IN A
V–
OUT B
–IN B
+IN B
4
5
8-Lead SOIC
(R Suffix)
APPLICATIONS
Instrumentation
Multi-Pole Filters
Precision Current Measurement
Photodiode Amplifiers
Sensors
Audio
OUT A
1
2
3
4
8
7
6
5
V+
–IN A
OUT B
–IN B
AD8512
+IN A
V–
+IN B
GENERAL DESCRIPTION
The AD8512 is a dual precision JFET amplifier featuring low
offset voltage, low input bias current, low input voltage noise,
and low input current noise.
The combination of low offsets, low noise, and very low input
bias currents makes this amplifier especially suitable for high
impedance sensor amplification and precise current measurements
using shunts. The combination of dc precision, low noise, and
fast settling time results in superior accuracy in medical instruments,
electronic measurement, and automated test equipment. Unlike
many competitive amplifiers, the AD8512 maintains its fast settling
performance even with substantial capacitive loads.
Fast slew rate and great stability with capacitive loads make the
AD8512 a perfect fit for high-performance filters.
Low input bias currents, low offset, and low noise result in wide
dynamic range in photodiode amplifier circuits.
Low noise and distortion, high output current, and excellent
speed make the AD8512 a great choice for stereo audio applications.
Unlike many older JFET amplifiers, the AD8512 does not suffer
from output phase reversal when input voltages exceed the maximum
common-mode voltage range.
The AD8512 is available in 8-lead narrow SOIC and 8-lead
mini-SOIC packages. Mini-SOIC packaged parts are only available
in tape and reel.
The AD8512 is specified over the extended industrial (–40°C to
+125°C) temperature range.
REV. 0
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
that may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781/329-4700
www.analog.com
Fax: 781/326-8703
© Analog Devices, Inc., 2002
Low TcVos: 1
Low Noise: 8 nV/
AD8512–SPECIFICATIONS
(@ V
S
=
5 V, V
CM
= 0 V, T
A
= 25
C, unless otherwise noted.)
Parameter
Symbol
Conditions
Min
Typ
Max Unit
INPUT CHARACTERISTICS
Offset Voltage (B Grade)
V
OS
0.08
0.4
mV
–40
°
C < T
A
< +125
°
C
0.8
mV
Offset Voltage (A Grade)
V
OS
0.1
0.9
mV
–40
°
C < T
A
< +125
°
C
1.8
mV
Input Bias Current
I
B
21
75
pA
–40
°
C < T
A
< +85
°
C
0.7
nA
–40
°
C < T
A
< +125
°
C
7.5
nA
Input Offset Current
I
OS
5
50
pA
–40
°
C < T
A
< +85
°
C
3
nA
–40
°
C < T
A
< +125
°
C
5
nA
Input Voltage Range
–2.1
+2.5 V
Common-Mode Rejection Ratio
CMRR
V
CM
= –2.1 V to +2.5 V
86
100
dB
Large Signal Voltage Gain
A
VO
R
L
= 2 k
Ω
, V
O
= –3 V to +3 V
65
107
V/mV
Offset Voltage Drift (B Grade)
∆
V
OS
/
∆
T
0.9
5
µ
V/
°
C
Offset Voltage Drift (A Grade)
∆
V
OS
/
∆
T
1.7
10
µ
V/
°
C
OUTPUT CHARACTERISTICS
Output Voltage High
V
OH
R
L
= 10 kΩ,
+4.1
+4.3
V
Output Voltage Low
V
OL
–40°C < T
A
< +125°C
–4.9
–4.7
V
Output Voltage High
V
OH
R
L
= 2 kΩ,
+3.9
+4.2
V
Output Voltage Low
V
OL
–40°C < T
A
< +125°C
–4.9
–4.5
V
Output Voltage High
V
OH
R
L
= 600 Ω,
+3.7
+4.1
V
Output Voltage Low
V
OL
–40°C < T
A
< +125°C
–4.8
–4.2
V
Output Current
I
OUT
±
40
±
54
mA
POWER SUPPLY
Power Supply Rejection Ratio
PSRR
V
S
= ±4.5 V to ± 18 V
86
130
dB
Supply Current/Amplifier
I
SY
V
O
= 0 V
1.8
2.3
mA
–40°C < T
A
< +125°C
2.5
mA
DYNAMIC PERFORMANCE
Slew Rate
SR
R
L
= 2 k
Ω
20
V/
µ
s
Gain Bandwidth Product
GBP
8
MHz
Settling Time
t
S
To 0.1%, 0 V to 4 V Step, G = 1
0.4
µ
s
THD + Noise
THD + N
1 kHz, G = 1, R
L
= 2 k
Ω
0.0005
%
Phase Margin
Øo
44.5
Degrees
NOISE PERFORMANCE
Voltage Noise Density
e
n
f = 10 Hz
34
nV/√
Hz
e
n
f = 100 Hz
12
nV/√
Hz
e
n
f = 1 kHz
8.0
10
nV/√
Hz
e
n
f = 10 kHz
7.6
nV/√
Hz
Peak-to-Peak Voltage Noise
e
n
p-p
0.1 Hz to 10 Hz Bandwidth
2.4
5.2
µV p-p
Specifications subject to change without notice.
–2–
REV. 0
AD8512
ELECTRICAL CHARACTERISTICS
(@ V
S
=
15 V, V
CM
= 0 V, T
A
= 25
C, unless otherwise noted.)
Parameter
Symbol
Conditions
Min
Typ
Max Unit
INPUT CHARACTERISTICS
Offset Voltage (B Grade)
V
OS
0.08
0.4
mV
–40
°
C < T
A
< +125
°
C
0.8
mV
Offset Voltage (A Grade)
V
OS
0.1
1.0
mV
–40
°
C < T
A
< +125
°
C
1.8
mV
Input Bias Current
I
B
25
80
pA
–40°C < T
A
< +85°C
0.7
nA
–40
°
C < T
A
< +125
°
C
10
nA
Input Offset Current
I
OS
3.5
75
pA
–40°C < T
A
< +85°C
3
nA
–40
°
C < T
A
< +125
°
C
5
nA
Input Voltage Range
–13.5
+13.0 V
Common-Mode Rejection Ratio
CMRR
V
CM
= –12.5 V to +12.5 V
86
108
dB
Large Signal Voltage Gain
A
VO
V
O
= –13.5 V to +13.5 V
115
196
V/mV
R
L
= 2 k
Ω
, V
CM
= 0 V
Offset Voltage Drift (B Grade)
∆V
OS
/∆T
1.0
5
µV/°C
Offset Voltage Drift (A Grade)
∆
V
OS
/
∆
T
1.7
10
µ
V/
°
C
OUTPUT CHARACTERISTICS
Output Voltage High
V
OH
R
L
= 10 kΩ,
+14.0
+14.2
V
Output Voltage Low
V
OL
–40°C < T
A
< +125°C
–14.9
–14.6 V
Output Voltage High
V
OH
R
L
= 2 kΩ,
+13.8
+14.1
V
Output Voltage Low
V
OL
–40°C < T
A
< +125°C
–14.8
–14.5 V
Output Voltage High
V
OH
R
L
= 600 Ω,
+13.5
+13.8
V
Output Voltage Low
V
OL
–40°C < T
A
< +125°C
–14.3
–13.8 V
Output Current
I
OUT
± 45
mA
POWER SUPPLY
Power Supply Rejection Ratio
PSRR
V
S
=
±
4.5 V to
±
18 V
86
dB
Supply Current/Amplifier
I
SY
V
O
= 0 V
1.9
2.3
mA
–40
°
C < T
A
< +125
°
C
2.5
mA
DYNAMIC PERFORMANCE
Slew Rate
SR
R
L
= 2 kΩ
20
V/µs
Gain Bandwidth Product
GBP
8
MHz
Settling Time
t
S
To 0.1%, 0 V to 10 V Step, G = 1
0.5
µs
To 0.01%, 0 V to 10 V Step, G = 1
0.9
µs
THD + Noise
THD + N
1 kHz, G = 1, R
L
= 2 k
Ω
0.0005
%
Phase Margin
Øo
52
Degrees
NOISE PERFORMANCE
Voltage Noise Density
e
n
f = 10 Hz
34
nV/√
Hz
e
n
f = 100 Hz
12
nV/√
Hz
e
n
f = 1 kHz
8.0
10
nV/√
Hz
e
n
f = 10 kHz
7.6
nV/√
Hz
Peak-to-Peak Voltage Noise
e
n
p-p
0.1 Hz to 10 Hz Bandwidth
2.4
5.2
µV p-p
Specifications subject to change without notice.
REV. 0
–3–
AD8512
ABSOLUTE MAXIMUM RATINGS
*
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 18 V
Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±V
S
Output Short-Circuit Duration
to GND . . . . . . . . . . . . . . . . . . . . Observe Derating Curves
Storage Temperature Range
R, RM Packages . . . . . . . . . . . . . . . . . . –65°C to +150°C
Operating Temperature Range . . . . . . . . . –40°C to +125°C
Junction Temperature Range
R, RM Packages . . . . . . . . . . . . . . . . . . –65°C to +150°C
Lead Temperature Range (Soldering, 10 sec) . . . . . . . 300°C
Electrostatic Discharge (HBM) . . . . . . . . . . . . . . . . . . 2000 V
*
Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those listed in the operational sections
of this specification is not implied. Exposure to absolute maximum rating condi-
tions for extended periods may affect device reliability.
Package Type
JA
*
JC
Unit
8-Lead MSOP (RM)
210
45
°
C/W
8-Lead SOIC (R)
158
43
°
C/W
*
θ
JA
is specified for worst-case conditions, i.e.,
θ
JA
is specified for device soldered
in circuit board for surface-mount packages.
ORDERING GUIDE
Temperature
Package
Package Branding
Model
Range
Description
Option
Information
AD8512AR
–40°C to +125°C
8-Lead SOIC
SO-8
AD8512AR-Reel
–40°C to +125°C
8-Lead SOIC
SO-8
AD8512AR-Reel7
–40°C to +125°C
8-Lead SOIC
SO-8
AD8512ARM-Reel –40°C to +125°C
8-Lead MSOP
RM-8
B8A
AD8512BR
–40°C to +125°C
8-Lead SOIC
SO-8
AD8512BR-Reel
–40°C to +125°C
8-Lead SOIC
SO-8
AD8512BR-Reel7
–40°C to +125°C
8-Lead SOIC
SO-8
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although
the AD8512 features proprietary ESD protection circuitry, permanent damage may occur on
devices subjected to high-energy electrostatic discharges. Therefore, proper ESD precautions are
recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
–4–
REV. 0
Typical Performance Characteristics–
AD8512
120
100k
V
SY
= 15V
T
A
= 25
C
V
SY
= 5V, 15V
100
10k
80
1k
60
100
40
20
10
0
1
40
0.5
0.4
0.3
0.2
0.1 0
0.1 0.2 0.3 0.4 0.5
25
10 5 0505050
125
INPUT OFFSET VOLTAGE – mV
TEMPERATURE –
C
TPC 1. Input Offset Voltage Distribution
TPC 4. Input Bias Current vs. Temperature
30
1000
25
V
SY
= 15V
T
A
= 25
C
AD8512 GRADE B
100
20
15V
15
10
5V
10
1
5
0
0.1
40
0
1
2
3
4
5
6
25
10 5 0505050
125
TcV
OS
–
V/
C
TEMPERATURE –
C
TPC 2. TcV
OS
Distribution
TPC 5. Input Offset Current vs. Temperature
30
40
V
SY
= 15V
T
A
= 25
C
AD8512 GRADE A
T
A
= 25
C
25
35
30
20
25
15
20
10
15
10
5
5
0
0
8
0
1
2
3
4
5
6
13
18
23
28
33
TcV
OS
–
V/
C
SUPPLY VOLTAGE – (V+ – V–)
TPC 3. TcV
OS
Distribution
TPC 6. Input Bias Current vs. Supply Voltage
REV. 0
–5–
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