ADG604 prb

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PRELIMINARY TECHNICAL DATA
1pC Charge Injection, Low Leakage
CMOS 4-Channel Multiplexer
Preliminary Technical Data
ADG604
FEATURES
1 pC Charge Injection
±2.7 V to ±5.5 V Dual Supply
+2.7 V to +5.5 V Single Supply
Extended Temperature Range -40
FUNCTIONAL BLOCK DIAGRAM
ADG604
C to +125
C
S1
4
100pA Leakage Currents
85
Ω
S2
5
ΩΩ
typ On Resistance
Rail-to-Rail Operation
Fast Switching Times
Typical Power Consumption (<0.1
µ
S3
11
6
D
S4
10
W)
TTL/CMOS Compatible Inputs
14-Lead TSSOP Package
1OF4
DECODER
1
14
2
APPLICATIONS
Automatic Test Equipment
Data Acquisition Systems
Battery Powered Instruments
Communication Systems
Sample and Hold Systems
Remote Powered Equipment
Audio and Video Signal Routing
Relay Replacement
Avionics
A0
A1
EN
GENERAL DESCRIPTION
The ADG604 is a CMOS analog multiplexer, comprising
of four single channels. It operates from a dual supply of
±2.7 V to ±5.5 V, or from a single supply of +2.7 V to
+5.5 V.
The ADG604 switches one of four inputs to a common
output, D, as determined by the 3-bit binary address lines,
A0, A1 and EN. A Logic “0” on the EN pin disables the
device.
The ADG604 offers ultra-low charge injection of 1pC and
leakage currents of less than 250pA at 85
C. It offers on-
resistance of 85 Ω typ, which is matched to within 8 Ω
between channels. The ADG604 also has low power dissi-
pation yet gives high switching speeds.
The ADG604 is available in a 14-lead TSSOP package.
C
3.Dual ± 2.7 V to 5 V or Single 2.7 V to 5.5 V supply.
4. Fully Specified at 12 5
C.
5. Small 14-Lead TSSOP Package.
REV. PrB 08/01
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781/329-4700
World Wide Web Site: http://www.analog.com
Fax: 781/326-8703
© Analog Devices, Inc., 2001
PRODUCT HIGHLIGHTS
1. Ultra-Low Charge Injection (Q
INJ
: 1.0 pC typ).
2. Leakage Current < 2 nA at 125
ADG604–SPECIFICATIONS
PRELIMINARY TECHNICAL DATA
DUAL SUPPLY
1
(V
DD
= +5 V ± 10%, V
SS
= -5 V ± 10%, GND = 0 V. All specifications -40°C to +125°C unless noted)
–40°C to
-40
C to
Parameter
+25°C +85°C
+125°C
Units
Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range
V
SS
to V
DD
V
V
DD
= +4.5 V, V
SS
= -4.5 V
On Resistance (R
ON
)
85
Ω typ
V
S
= ± 3.3 V, I
S
= –1 mA,
110
150
165
Ω max
Test Circuit 1
On Resistance Match Between
Channels (∆
R
ON
)
6
Ω typ
V
S
= ± 3.3 V, I
S
= –1 mA
8
10
Ω max
On-Resistance Flatness (R
FLAT(ON)
)
5
Ω typ
V
S
= ± 3.3 V, I
S
= –1 mA
60
65
Ω max
LEAKAGE CURRENTS
V
DD
= +5.5 V, V
SS
= -5.5 V
Source OFF Leakage I
S
(OFF)
±0.01
nA typ
V
S
= ±4.5 V, V
D
=
4.5 V,
±0.1
±0.25
2
nA max Test Circuit 2
Drain OFF Leakage I
D
(OFF)
±0.01
nA typ
V
S
= ±4.5 V, V
D
=
4.5 V,
±0.1
±0.25
4
nA max
Test Circuit 2
Channel ON Leakage I
D,
I
S
(ON)
±0.01
nA typ
V
S
= V
D
= ±4.5 V, Test Circuit 3
±0.1
±0.25
8
nA max
DIGITAL INPUTS
Input High Voltage, V
INH
2.4
V min
Input Low Voltage, V
INL
0.8
V max
Input Current
I
INL
or I
INH
0.005
µA typ
V
IN
= V
INL
or V
INH
±0.1
µA max
C
IN
, Digital Input Capacitance
5
pF typ
DYNAMIC CHARACTERISTICS
2
Transition Time
120
ns typ
V
S1
= +3 V, V
S4
= -3 V, R
L
= 300 Ω ,
135
150
ns max
C
L
= 35 pF, Test Circuit 4
t
ON
Enable
110
ns typ
R
L
= 300 Ω , C
L
= 35 pF
TBD
130
145
ns max
V
S
= 3.3 V, Test Circuit 6
t
OFF
Enable
40
ns typ
R
L
= 300 Ω , C
L
= 35 pF
TBD
50
55
ns max
V
S
= 3.3 V, Test Circuit 6
Break-Before-Make Time Delay, t
BBM
ns typ
R
L
= 300 Ω
, C
L
= 35 pF,
85
100
ns min
V
S1
= V
S2
= 3.3 V, Test Circuit 5
Charge Injection
±1
pC typ
V
S
= -5.5 V to +5.5 V, R
S
= 0 Ω,
±1.5
pC Max
C
L
= 1 nF, Test Circuit 7
Off Isolation
TBD
dB typ
R
L
= 50 Ω , C
L
= 5 pF, f = 1 MHz,
Test Circuit 8
Channel-to-Channel Crosstalk
TBD
dB typ
R
L
= 50 Ω , C
L
= 5 pF, f = 1 MHz,
Test Circuit 10
Bandwidth –3 dB
TBD
MHz typ R
L
= 50 Ω
, C
L
= 5 pF, Test Circuit 9
C
S
(OFF)
2
pF typ
f = 1MHz
C
D
(OFF)
12
pF typ
f = 1MHz
C
D,
C
S
(ON)
16
pF typ
f = 1MHz
POWER REQUIREMENTS
V
DD
= +5.5 V, V
SS
= -5.5 V
I
DD
0.001
µA typ
Digital Inputs = 0 V or 5.5 V
1.0
µA max
Iss
0.001
µA typ
Digital Inputs = 0 V or 5.5 V
1.0
µA max
NOTES
1
Temperature ranges are as follows: Y Grade: –40°C to +125°C.
2
Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
–2–
REV. PrB
PRELIMINARY TECHNICAL DATA
ADG604
SINGLE SUPPLY
1
(V
DD
= +5 V ± 10%, V
SS
= 0 V, GND = 0 V. All specifications -40°C to +125°C unless otherwise noted.)
–40°C to
-40
C to
Parameter
+25°C +85°C
+125°C
Units
Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range
0 V to V
DD
V
V
DD
= +4.5 V, V
SS
= 0 V
On Resistance (R
ON
)
140
Ω typ
V
S
= 3.3 V, I
S
= –1 mA,
200
255
max
Test Circuit 1
On Resistance Match Between
Channels (∆
R
ON
)
6
Ω typ
V
S
= 3.3 V, I
S
= –1 mA
8
10
Ω max
On-Resistance Flatness (R
FLAT(ON)
)
5
Ω typ
V
S
= 0 V, 3.3 V, I
S
= –1 mA
90
max
LEAKAGE CURRENTS
V
DD
= +5.5 V
Source OFF Leakage I
S
(OFF)
±0.01
nA typ
V
S
= 1 V/4.5 V, V
D
= 4.5 V/1 V,
±0.1
±0.25
2
nA max
Test Circuit 2
Drain OFF Leakage I
D
(OFF)
±0.01
nA typ
V
S
= 1 V/4.5 V, V
D
= 4.5 V/1 V,
±0.1
±0.25
4
nA max
Test Circuit 2
Channel ON Leakage I
D
, I
S
(ON)
±0.01
nA typ
V
S
= V
D
= +4.5 V/1 V,
±0.1
±0.25
8
nA max
Test Circuit 3
DIGITAL INPUTS
Input High Voltage, V
INH
2.4
V min
Input Low Voltage, V
INL
0.8
V max
Input Current
I
INL
or I
INH
0.005
µA typ
V
IN
= V
INL
or V
INH
±0.1
µA max
C
IN
, Digital Input Capacitance
5
pF typ
DYNAMIC CHARACTERISTICS
2
Transition Time
TBD
ns typ
V
S1
= +3 V, V
S4
= 0 V, R
L
= 300 Ω ,
240
270
ns max
C
L
= 35 pF,Test Circuit 4
t
ON
Enable
180
ns typ
R
L
= 300 Ω , C
L
= 35 pF
TBD
210
240
ns max
V
S
= 3.3 V, Test Circuit 6
t
OFF
Enable
65
ns typ
R
L
= 300 Ω , C
L
= 35 pF
TBD
70
80
ns max
V
S
= 3.3 V, Test Circuit 6
Break-Before-Make Time Delay, t
BBM
40
ns typ
R
L
= 300 Ω
, C
L
= 35 pF,
170
195
ns min
V
S1
= V
S2
= 3.3 V, Test Circuit 5
Charge Injection
±1
pC typ
V
S
= 0 V to +5.5 V, R
S
= 0 Ω,
±1.5
pC max
C
L
= 1 nF, Test Circuit 7
Off Isolation
TBD
dB typ
R
L
= 50 Ω , C
L
= 5 pF, f = 1 MHz,
Test Circuit 8
Channel-to-Channel Crosstalk
TBD
dB typ
R
L
= 50 Ω , C
L
= 5 pF, f = 1 MHz,
Test Circuit 10
Bandwidth –3 dB
TBD
MHz typ R
L
= 50 Ω
, C
L
= 5 pF, Test Circuit 9
C
S
(OFF)
3
pF typ
f = 1MHz
C
D
(OFF)
13
pF typ
f = 1MHz
C
D,
C
S
(ON)
16
pF typ
f = 1MHz
POWER REQUIREMENTS
V
DD
= +5.5 V
Digital Inputs = 0 V or 5.5 V
I
DD
0.001
µA typ
1.0
µA max
NOTES
1
Temperature ranges are as follows: Y Grade: –40°C to +125°C.
2
Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
REV. PrB
–3–
ADG604–SPECIFICATIONS
PRELIMINARY TECHNICAL DATA
SINGLE SUPPLY
1
(V
DD
= +3 V ± 10%, V
SS
= 0 V, GND = 0 V. All specifications -40°C to +125°C unless otherwise noted.)
–40°C to
-40
C to
Parameter
+25°C
+85°C
+125°C
Units
Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range
0 V to V
DD
V
V
DD
= 3 V, V
SS
= 0 V
On Resistance (R
ON
)
220
typ
V
S
= 1.5 V, I
S
= –1 mA,
300
365
380
max Test Circuit 1
On Resistance Match Between
Channels (∆
R
ON
)
TBD
typ
V
S
= 1.5 V, I
S
= –1 mA
TBD
max
LEAKAGE CURRENTS
V
DD
= +3.3 V
Source OFF Leakage I
S
(OFF)
±0.01
nA typ
V
S
= 1 V/3 V, V
D
= 3 V/1 V,
±0.1
±0.25
2
nA max
Test Circuit 2
Drain OFF Leakage I
D
(OFF)
±0.01
nA typ
V
S
= 1 V/3 V, V
D
= 3V/1 V,
±0.1
±0.25
4
nA max
Test Circuit 2
Channel ON Leakage I
D
, I
S
(ON)
±0.01
nA typ
V
S
= V
D
= 1 V/3 V,
±0.1
±0.25
8
nA max
Test Circuit 3
DIGITAL INPUTS
Input High Voltage, V
INH
2.0
V min
Input Low Voltage, V
INL
0.8
V max
Input Current
I
INL
or I
INH
0.005
µA typ
V
IN
= V
INL
or V
INH
±0.1
µA max
C
IN
, Digital Input Capacitance
5
pF typ
DYNAMIC CHARACTERISTICS
2
Transition Time
420
ns typ
V
S1
= +1.5 V, V
S4
= 0 V, R
L
= 300 Ω
,
480
530
ns max
C
L
= 35 pF,Test Circuit 4
t
ON
Enable
390
ns typ
R
L
= 300 Ω , C
L
= 35 pF
TBD
415
460
ns max
V
S
= 1.5 V, Test Circuit 6
t
OFF
Enable
76
ns typ
R
L
= 300 Ω , C
L
= 35 pF
TBD
TBD
165
ns max
V
S
= 1.5 V, Test Circuit 6
Break-Before-Make Time Delay, t
BBM
120
ns typ
R
L
= 300 Ω
, C
L
= 35 pF,
155
380
ns min
V
S1
= V
S2
= 1.5 V, Test Circuit 5
Charge Injection
±1
pC typ
V
S
= 0 V to +3.3 V, R
S
= 0 Ω,
±1.5
pC max
C
L
= 1 nF, Test Circuit 7
Off Isolation
TBD
dB typ
R
L
= 50 Ω , C
L
= 5 pF, f = 1 MHz,
Test Circuit 8
Channel-to-Channel Crosstalk
TBD
dB typ
R
L
= 50 Ω , C
L
= 5 pF, f = 1 MHz,
Test Circuit 10
Bandwidth –3 dB
TBD
MHz typ R
L
= 50 Ω , C
L
= 5 pF, Test Circuit 9
C
S
(OFF)
3
pF typ
f = 1MHz
C
D
(OFF)
13
pF typ
f = 1MHz
C
D,
C
S
(ON)
16
pF typ
f = 1MHz
POWER REQUIREMENTS
V
DD
= +3.3 V
Digital Inputs = 0 V or 3.3 V
I
DD
0.001
µA typ
1.0
µA max
NOTES
1
Temperature ranges are as follows: Y Grade: –40°C to +125°C.
2
Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
–4–
REV. PrB
PRELIMINARY TECHNICAL DATA
ADG604
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= +25°C unless otherwise noted)
V
DD
to V
SS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
13 V
V
DD
to GND . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +6.5 V
V
SS
to GND . . . . . . . . . . . . . . . . . . . . . . . . +0.3 V to -6.5 V
Analog Inputs
2
. . . . . . . . . . . . . . V
SS
–0.3 V to V
DD
+ 0.3 V
Digital Inputs
2
. . . . . . . . . . . . . . . –0.3 V to V
DD
+ 0.3 V or
30 mA, Whichever Occurs First
Peak Current, S or D . . . . . . . . . . . . . . . . . . . . . . . . . 20 mA
(Pulsed at 1 ms, 10% Duty Cycle max)
Continuous Current, S or D . . . . . . . . . . . . . . . . . . . 10 mA
Operating Temperature Range
Extended (Y Grade) . . . . . . . . . . . . . . .–40°C to +125°C
Storage Temperature Range . . . . . . . . . .–65°C to +150°C
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . +150°C
TSSOP Package, Power Dissipation . . . . . . . . . . 430 mW
θ
JA
Thermal Impedance . . . . . . . . . . . . . . . . . . 150°C/W
θ
JC
Thermal Impedance . . . . . . . . . . . . . . . . . . . 27°C/W
Lead Temperature, Soldering (10 seconds) . . . . . . . 300°C
IR Reflow, Peak Temperature . . . . . . . . . . . . . . +220°C
NOTES
1
Stresses above those listed under Absolute Maximum Ratings may cause permanent
damage to the device. This is a stress rating only; functional operation of the device
at these or any other conditions above those listed in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability. Only one absolute maximum rating may
be applied at any one time.
2
Overvoltages at EN, A0, A1, S or D will be clamped by internal diodes. Current should
be limited to the maximum ratings given.
ORDERING GUIDE
Model Option
Temperature Range
Package Description
Package
ADG604YRU
–40°C to +125°C
Thin Shrink Small Outline (TSSOP)
RU-14
PIN CONFIGURATION
14-Lead TSSOP
(RU-14)
Table I. Truth Table for the ADG604
A1
A0
EN
ON Switch
X
X
0
NONE
0
0
1
1
A0
EN
V
SS
S1
S2
1
2
3
4
5
6
7
14
A1
GND
V
DD
S3
S4
NC
NC
0
1
1
2
1
0
1
3
13
12
1
1
1
4
ADG604
11
10
TOP VIEW
(Not to Scale
)
D
9
NC
8
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although
the ADG604 features proprietary ESD protection circuitry, permanent damage may occur on devices
subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recom-
mended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
REV. PrB
–5–
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